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Samsung 860 DCT internal solid state drive 2.5" 1920 GB Serial ATA III MLC
Part No
MZ-76E1T9E
SKU:MZ-76E1T9E
In Stock
V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 48 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.
Optimized Performance & Value
Built to handle the heavier workloads of data center usage, the 860DCT delivers a high level of sustained performance at a great value for your business.
Outstanding Reliability
The 860DCT 1.9TB is optimized for server and data center environments by offering reinforced endurance, low power consumption and a 3-year limited warranty up to 698 TBW.
Data Protection for Peace of Mind
Secure data without performance degradation thanks to AES 256-bit encryption.
Efficient Power Management
Thanks to low power consumption, you can enhance efficiency for operations and maintenance.
S.M.A.R.T.
Monitor the computer drives proactively to detect and report various reliability indicators with Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T).
Samsung Components
Samsung's solid state drives are built entirely from Samsung components, leveraging our extensive OEM expertise to allow complete, optimized integration.


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SSD capacity | 1920 GB |
Memory type | MLC |
Data transmission | |
---|---|
Random write (4KB) | 19000 IOPS |
Random read (4KB) | 98000 IOPS |
Data transfer rate | 6 Gbit/s |
Security | |
Security algorithms | 256-bit AES |
Endurance | |
Mean time between failures (MTBF) | 1500000 h |
Performance | |
Interface | Serial ATA III |
Component for | Server/workstation |
Controller type | Samsung MJX |
NVMe | No |
Sequential write speed (AS SSD) | 520 MB/s |
Sequential read speed (AS SSD) | 550 MB/s |
NAND flash type | MLC (Multi Level Cell) |
Active garbage collection | Yes |
TBW rating | 698 |
SSD capacity | 1920 GB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
TRIM support | Yes |
Memory type | MLC |
Random write (4KB) | 19000 IOPS |
Random read (4KB) | 98000 IOPS |
Mean time between failures (MTBF) | 1500000 h |
Data transfer rate | 6 Gbit/s |
Design | |
Component for | Server/workstation |
Product colour | Black |
SSD form factor | 2.5" |
Features | |
Interface | Serial ATA III |
Component for | Server/workstation |
Controller type | Samsung MJX |
NVMe | No |
Sequential write speed (AS SSD) | 520 MB/s |
Sequential read speed (AS SSD) | 550 MB/s |
NAND flash type | MLC (Multi Level Cell) |
Active garbage collection | Yes |
TBW rating | 698 |
SSD capacity | 1920 GB |
Security algorithms | 256-bit AES |
S.M.A.R.T. support | Yes |
TRIM support | Yes |
Memory type | MLC |
Random write (4KB) | 19000 IOPS |
Random read (4KB) | 98000 IOPS |
Mean time between failures (MTBF) | 1500000 h |
Data transfer rate | 6 Gbit/s |
SSD form factor | 2.5" |
Power | |
Power consumption (write) | 2.95 W |
Power consumption (read) | 2.02 W |
Power consumption (idle) | 1.05 W |
Operational conditions | |
Operating temperature (T-T) | 0 - 70 °C |
Storage temperature (T-T) | -40 - 85 °C |
Operating relative humidity (H-H) | 5 - 95% |
Storage relative humidity (H-H) | 5 - 95% |
Operating shock | 1500 G |
Non-operating shock | 1500 G |
Non-operating vibration | 20 G |
Technical details | |
Interface | Serial ATA III |
S.M.A.R.T. support | Yes |
Operating temperature (T-T) | 0 - 70 °C |
TRIM support | Yes |
Storage temperature (T-T) | -40 - 85 °C |
Operating relative humidity (H-H) | 5 - 95% |
Storage relative humidity (H-H) | 5 - 95% |
Operating shock | 1500 G |
Non-operating shock | 1500 G |
Non-operating vibration | 20 G |
Product colour | Black |
SSD form factor | 2.5" |
Weight & dimensions | |
Width | 100.1 mm |
Weight | 60 g |
Height | 6.9 mm |
Depth | 69.9 mm |
Other features | |
Product colour | Black |
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Part No | MZ-76E1T9E |
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