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Samsung 860 EVO internal solid state drive 2.5" 2000 GB Serial ATA III MLC

SKU:MZ-76E2T0E

In Stock

At a Glance
Designed for everyday computing, the Samsung 860 EVO is powered by our latest V-NAND technology and a robust algorithm-based Samsung controller to handle the workloads of mainstream PCs and laptops. Get fast, enduring performance with exceptional reliability and expanded compatibility.

This model is packaged in a simple white box to support the needs of our solution providers.

- Featuring Samsung's latest 64-layer V-NAND technology to handle the workloads of mainstream PCs and laptops
- Refined everyday computing for business professionals
- Reliable endurance with an industry warranty up to 2,400 Total Bytes Written (TBW) for 5 years
- Ideal for high-performance client PC applications (not designed for server or data center applications and warranty does not support such usage)

Samsung V-NAND Technology
Samsung's V-NAND flash memory helps to overcome the limitations of conventional planar NAND architecture. It stacks 64 cell layers vertically over one another rather than trying to fit itself onto a fixed horizontal space, in order to provide high density and performance with a small footprint.

Fast Read/Write Performance
The 860 PRO performs at sequential write speeds up to 520 MB/s and sequential read speeds up to 550 MB/s with a robust a robust algorithm-based Samsung MJX controller (up to 1 GHz).

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Hard drive
SSD capacity 2000 GB
Memory type MLC
Data transmission
Read speed 550 MB/s
Write speed 520 MB/s
Random write (4KB) 90000 IOPS
Random read (4KB) 98000 IOPS
Data transfer rate 6 Gbit/s
Security
Security algorithms 256-bit AES
Endurance
Mean time between failures (MTBF) 1500000 h
Performance
Interface Serial ATA III
Component for PC/notebook
Controller type Samsung MJX
NAND flash type MLC (Multi Level Cell)
Opal SSC 2.0 Yes
IEEE 1667 Yes
DevSlp (device sleep) support Yes
Active garbage collection Yes
TBW rating 4800
SSD capacity 2000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 550 MB/s
TRIM support Yes
Write speed 520 MB/s
Memory type MLC
Random write (4KB) 90000 IOPS
Random read (4KB) 98000 IOPS
Mean time between failures (MTBF) 1500000 h
Data transfer rate 6 Gbit/s
Design
Component for PC/notebook
Product colour Black
SSD form factor 2.5"
Features
Interface Serial ATA III
Component for PC/notebook
Controller type Samsung MJX
NAND flash type MLC (Multi Level Cell)
Opal SSC 2.0 Yes
IEEE 1667 Yes
DevSlp (device sleep) support Yes
Active garbage collection Yes
TBW rating 4800
SSD capacity 2000 GB
Security algorithms 256-bit AES
S.M.A.R.T. support Yes
Read speed 550 MB/s
TRIM support Yes
Write speed 520 MB/s
Memory type MLC
Random write (4KB) 90000 IOPS
Random read (4KB) 98000 IOPS
Mean time between failures (MTBF) 1500000 h
Data transfer rate 6 Gbit/s
SSD form factor 2.5"
Power
Power consumption (average) 3 W
Power consumption (max) 4 W
Power consumption DevSlp (device sleep) 2 mW
Power consumption (idle) 0.5 W
Operational conditions
Operating temperature (T-T) 0 - 70 °C
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Non-operating shock 1500 G
Technical details
Interface Serial ATA III
S.M.A.R.T. support Yes
Operating temperature (T-T) 0 - 70 °C
TRIM support Yes
Storage temperature (T-T) -40 - 85 °C
Operating relative humidity (H-H) 5 - 95%
Storage relative humidity (H-H) 5 - 95%
Operating shock 1500 G
Non-operating shock 1500 G
Product colour Black
SSD form factor 2.5"
Weight & dimensions
Width 100 mm
Weight 86.18 g
Height 70.1 mm
Depth 6.86 mm
Other features
Product colour Black
More Information
Part No MZ-76E2T0E
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