Samsung 850 EVO internal solid state drive 2.5" 500 GB Serial ATA III MLC

What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilising a smaller footprint.

Optimise daily computing with TurboWrite technology for unrivalled read/write speeds.
Achieve the ultimate read/write performance to maximise your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540 MB/s) and write (520 MB/s) speeds. Plus, you also gain optimised random performance in all QD for client PC usage scenario.
* PCmark7(250 GB ) : 6,700(840 EVO) > 7,600(850 EVO).
** Random Write(QD32,120 GB) : 36,000 IOPS(840 EVO) > 88,000 IOPS(850 EVO).

Get into the fast lane with the improved RAPID mode.
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilising unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
* PCMARK7 RAW(250 GB) : 7,500 > 15,000(Rapid mode).