1 | Hewlett Packard Enterprise 5130-24G-SFP-4SFP+ EI Managed L3 Black 1U | ![]() |
Intel DC P4800X internal solid state drive HHHL 750 GB PCI Express 3.0 3D Xpoint NVMe
Part No
SSDPED1K750GA10
SKU:SSDPED1K750GA10
In Stock
Intel® Memory Drive Technology transparently integrates Intel® Optane™ SSDs into the memory subsystem.
Intel® Memory Drive Technology is a revolutionary software that extends system memory transparently. Combined with an Intel® Optane™ Solid State Drive (SSD), Intel® Memory Drive Technology transparently integrates the SSD into the memory subsystem and makes it appear like DRAM to the OS and applications. Intel® Memory Drive Technology increases memory capacity beyond DRAM limitations and delivers DRAM-like performance in a completely transparent manner to the operating system and application. In addition, no changes are required to the OS or applications.
There are two key scenarios in which it is beneficial for an IT environment to use
Intel® Memory Drive Technology:
- Displace a portion of DRAM to reduce overall memory cost
- Grow the memory pool beyond DRAM capacities when large system memory is required
Displace DRAM for More Affordable Memory
Intel® Memory Drive Technology enables data centers to deliver more affordable memory pools by displacing a portion of DRAM. By pairing the DRAM with the high-performing non-volatile memory of the Intel® Optane™ SSD, data centers can more cost-effectively execute workloads that require high-end memory configurations with much lower DRAM capacity installed, saving on both Capex and Opex costs.
Extend Memory for a Bigger Memory Footprint
Intel® Memory Drive Technology enables data centers to grow the memory footprint beyond the DRAM capacity. Together, the DRAM and the Intel® Optane™ SSD emulate a single volatile memory pool. Intel® Memory Drive Technology intelligently determines where data should be located in the pool to maximize performance, enabling servers to deliver performance across many workloads-even when DRAM is only supplying one-third to one-tenth of the memory pool capacity.
Enable New Possibilities for the Enterprise
The combination of cost-efficiency and increased capacity means enterprises can break through today’s memory limits, enabling new possibilities—like accessing higher-capacity, in-memory datasets to deliver better, faster analytics insight. As an example, cloud providers can reduce capital cost for memory when enabled to oversubscribe workloads with greater overall capacity. Or, high-performance computing centers can increase large memory datasets to improve research and scientific results, and test new simulations quickly and cost-efficiently.


- 100% Secure
- 100% Money-Back Guarantee
- Best Price
- PayPal world seller
Hard drive | |
---|---|
SSD capacity | 750 GB |
Memory type | 3D Xpoint |
Lithography | 20 nm |
Performance | |
Intel® Smart Response Technology | No |
Intel® Rapid Start Technology | No |
Intel® Optane™ | Yes |
Intel High Endurance Technology (HET) | Yes |
Interface | PCI Express 3.0 |
Component for | Server/workstation |
SSD ARK ID | 97164 |
NVMe | Yes |
End-to-End Data Protection | Yes |
SSD capacity | 750 GB |
Security algorithms | 256-bit AES |
Read speed | 2500 MB/s |
Write speed | 2200 MB/s |
Memory type | 3D Xpoint |
Uncorrectable Bit Error Rate (UBER) | <1 sector per 10^17 bits read |
SSD temperature monitoring | Yes |
Random write (100% span) | 550000 IOPS |
Random read (100% span) | 550000 IOPS |
Mean time between failures (MTBF) | 2000000 h |
Lithography | 20 nm |
Write latency | 10 µs |
Read latency | 10 µs |
Enhanced Power Loss Data Protection technology | Yes |
PCI Express CEM revision | 3.0 |
Data transmission | |
Read speed | 2500 MB/s |
Write speed | 2200 MB/s |
Random write (100% span) | 550000 IOPS |
Random read (100% span) | 550000 IOPS |
Write latency | 10 µs |
Read latency | 10 µs |
Security | |
Security algorithms | 256-bit AES |
Endurance | |
Uncorrectable Bit Error Rate (UBER) | <1 sector per 10^17 bits read |
Mean time between failures (MTBF) | 2000000 h |
Design | |
Component for | Server/workstation |
SSD form factor | HHHL |
Market segment | SRV |
Product family | Data center SSD |
Product series | Intel® Optane™ SSD DC P4800X Series |
Product codename | Cold Stream |
Features | |
Interface | PCI Express 3.0 |
Component for | Server/workstation |
SSD ARK ID | 97164 |
NVMe | Yes |
End-to-End Data Protection | Yes |
SSD capacity | 750 GB |
Security algorithms | 256-bit AES |
Read speed | 2500 MB/s |
Write speed | 2200 MB/s |
Memory type | 3D Xpoint |
Uncorrectable Bit Error Rate (UBER) | <1 sector per 10^17 bits read |
SSD temperature monitoring | Yes |
Random write (100% span) | 550000 IOPS |
Random read (100% span) | 550000 IOPS |
Mean time between failures (MTBF) | 2000000 h |
Lithography | 20 nm |
Write latency | 10 µs |
Read latency | 10 µs |
Enhanced Power Loss Data Protection technology | Yes |
SSD form factor | HHHL |
Market segment | SRV |
PCI Express CEM revision | 3.0 |
Brand-specific features | |
Intel® Smart Response Technology | No |
Intel® Rapid Start Technology | No |
Intel® Optane™ | Yes |
Intel High Endurance Technology (HET) | Yes |
Intel Smart Response Technology version | 0.00 |
Product family | Data center SSD |
Product series | Intel® Optane™ SSD DC P4800X Series |
Product codename | Cold Stream |
Intel Rapid Start Technology version | 0.00 |
Intel® Remote Secure Erase | No |
Operational conditions | |
Operating temperature (T-T) | 0 - 70 °C |
Operating shock | 50 G |
Non-operating shock | 170 G |
Non-operating vibration | 3.13 G |
Technical details | |
Interface | PCI Express 3.0 |
Operating temperature (T-T) | 0 - 70 °C |
Operating shock | 50 G |
Non-operating shock | 170 G |
Non-operating vibration | 3.13 G |
SSD temperature monitoring | Yes |
Intel High Endurance Technology (HET) | Yes |
Enhanced Power Loss Data Protection technology | Yes |
SSD form factor | HHHL |
Market segment | SRV |
Intel Smart Response Technology version | 0.00 |
Intel Rapid Start Technology version | 0.00 |
Status | Launched |
SSD shock | 50 G, 170 in/s, trapezoidal |
SSD power consumption (idle) | 6 |
SSD power consumption (active) | 18 |
SSD hardware encryption | AES 256 bit |
SSD endurance rating | 41.0 PBW |
Sequential writing speed | 2200 MB/s |
Sequential reading | 2500 MB/s |
Product brief URL | https://www.intel.com/content/www/us/en/solid-state-drives/optane-ssd-dc-p4800x-brief.html |
Launch date | Q4'17 |
Drive capacity | 750 GB |
Last change | 63903513 |
Remote Secure Erase (RSE) technology version | 0.00 |
Other features | |
Uncorrectable Bit Error Rate (UBER) | <1 sector per 10^17 bits read |
Status | Launched |
SSD shock | 50 G, 170 in/s, trapezoidal |
SSD power consumption (idle) | 6 |
SSD power consumption (active) | 18 |
SSD hardware encryption | AES 256 bit |
SSD endurance rating | 41.0 PBW |
Sequential writing speed | 2200 MB/s |
Sequential reading | 2500 MB/s |
Product brief URL | https://www.intel.com/content/www/us/en/solid-state-drives/optane-ssd-dc-p4800x-brief.html |
Launch date | Q4'17 |
Drive capacity | 750 GB |
Last change | 63903513 |
Product family | Data center SSD |
Product series | Intel® Optane™ SSD DC P4800X Series |
Product codename | Cold Stream |
Intel Rapid Start Technology version | 0.00 |
Remote Secure Erase (RSE) technology version | 0.00 |
Product Finder
Baskets
Our Services
UK IT Tenders
13 May 2019 08:01
13 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
14 May 2019 08:01
Part No | SSDPED1K750GA10 |
---|
Write Your Own Review